Local Laser Joining of Glass and Silicon

By Assi Hansen, Isamu Miyamoto, Tiina Amberla, Yasuhiro Okamoto

One of the most employed material combinations in microtechnology is the glass-silicon pair. Since the huge growth of the microelectromechanical devices, sensors and micro-fluidic devices, bonding of this couple has become more and more critical issue. Many of these glass-silicon bonding processes, for example anodic bonding, fusion bonding and eutectic bonding, have reached their limits in terms of flexibility. In addition, high temperature and electrical field applied in the process can limit the application. Compared to conventional methods, local laser joining technique can provide many advantages, such as localized and flexible joining, non-contact manufacturing, high precision and repeatability, easiness and minimization of heat effects. The technique is based on the principle of transmission welding, where glass is transparent to the wavelength used and hence the laser beam passes through the glass wafer and is absorbed to silicon. As a result, silicon is melted and upon resolidification bonding is realized between the two substrates. Continue reading

Laser Applications in the Automotive Industry

By: Klaus Loeffler

TRUMPF Laser und Systemtechnik GmbH, Ditzingen, Germany

The automotive industry has been a target market for the laser soon after the invention of the laser in 1960. Mass production and flexibility have been the arguments for the laser. The first installations in 1973 all the way to late 1980 have been successful due to the missing industrial ready laser resonators. But the laser has seen a fast development over the years and with it the use of lasers in the automotive industry.

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Laser Joining for Packaging in MEMS Applications and Micro-Devices

By: Norbert Lorenz

In recent years the interest in micro-devices, including Micro-Electro-Mechanical-Systems (MEMS), from research institutions, industry and the press has risen considerably. However one of the persisting challenges in the fabrication of such devices is the packaging process. A number of different bonding techniques have been developed but in general they require the entire device to be heated to high temperatures. In particular for direct bonding techniques like Si-fusion and anodic bonding, temperatures in excess of 1000°C and strong electric fields (1000-2000 V) are essential for successful packaging. As a consequence the use of temperature-sensitive materials within the package is restricted and problems are generated in multi-stage packaging processes where several heating cycles are carried out in sequence; parts joined in an earlier heating step can disassemble in a later one. Furthermore it is clearly important that the package should not affect the performance of the device or cause any damage. Often hermetic and/or vacuum packaging is required which makes the process application specific and expensive. Therefore it can easily account for up to 50% of the overall device cost and can even reach as much as 90%.

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